Fabrication and size prediction of crystalline nanoparticles of silicon induced by nanogrinding with ultrafine diamond grits

In this paper, we report on the enhanced control of resistive switching in multilayer Si/SiO2 structures, which permit the formation of Si nanocrystals with a typical size of 588 nm and overall good shape homogeneity The deposition of a different number of Si and SiO2 bilayers (6, 8 and 10) allowed control of SET/RESET voltages in negative bias ranges 45-10 V and 63-13 V for six- and ten-bilayer devices, respectively The corresponding resistance ratio between ON/OFF states varied in the ranges 107-105 for the aforementioned number of bilayers Based on the result of XPS measurements, we suggest that the resistive switching in the studied system occurs due to the formation and annihilation of Si-Si and Si-O bonds, which serve as conductive pathways and isolating material, respectively

Resistive switching control for conductive Si-nanocrystals embedded in Si/SiO2 multilayers.

In this paper, we study the structural, optical and electro-optical properties of silicon rich oxide (SRO) films, with 6.2 (SRO₃₀) and 7.3 at.% (SRO₂₀) of silicon excess thermally annealed at different temperatures and used as an active layer in light emitting capacitors (LECs). A typical photoluminescence (PL) red-shift is observed as the silicon content and annealing temperature are increased. Nevertheless, when SRO₃₀ films are used in LECs, a resistance switching (RS) behavior from a high current state (HCS) to a low conduction state (LCS) is observed, enhancing the intense blue electroluminescence (EL). This RS produces a long spectral blue-shift (∼227 nm) between the EL and PL band, and it is related to structural defects created by a high current flow through preferential conductive paths breaking off Si-Si bonds from very small silicon nanoparticles (Si-nps) (Eδ (Si ↑ Si ≡ Si) centers). LECs with SRO₂₀ films do not present the RS behavior and only exhibit a slight shift between PL and EL, both in red spectra. The carrier transport in these LEC devices is analyzed as being trap assisted tunnelling and Poole-Frenkel through a quasi 'continuum' of defect traps and quantum dots for the conduction mechanism in SRO₃₀ and SRO₂₀ films, respectively. The results prove the feasibility of obtaining light emitting devices by using simple panel structures with Si-nps embedded in the dielectric layer.

https://iopscience.iop.org/article/10.1088/0957-4484/26/39/395202/pdf

Effect of the structure on luminescent characteristics of SRO-based light emitting capacitors.

Silicon excess and thermal annealing effects on structural and optical properties of co-sputtered SRO films

A comparative study of amorphous silicon carbide and silicon rich oxide for light emission applications

Light emitting capacitors (LECs) were fabricated using silicon rich oxide (SRO) films as active layer. Blue and red electroluminescence (EL) was observed by changing the silicon nanoparticle (Si-np) size from 1.5 to 2.7 nm embedded in the silica matrix. EL is ascribed to the charge injection into the Si-nps embedded in the SRO films through a balanced transport network. The EL emission is observed with the naked eye and in daylight conditions on the whole area of devices. Therefore, these results prove the feasibility to obtain LECs by using simple capacitors with SRO films as the active layer.

Strong blue and red luminescence in silicon nanoparticles based light emitting capacitors

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Strong blue and red luminescence in silicon nanoparticles based light emitting capacitors